Resistance method silicon carbide crystal growth equipmentUK-T6
1. Perfectly solving the technical difficulty of large radial temperature gradient in induction furnaces, it can achieve small radial temperature gradient and controllable axial temperature gradient, with fewer internal defects in the crystal, high yield, and good repeatability;
2. Compared with the traditional crystal growth cycle of 7-14 days, the UKING ERH SiC RV4.0 equipment has a faster crystal growth rate and the entire process can be controlled within 7 days;
3. High degree of automation, simple operation, conducive to mass production, improving crystal growth efficiency and stability.
2. Compared with the traditional crystal growth cycle of 7-14 days, the UKING ERH SiC RV4.0 equipment has a faster crystal growth rate and the entire process can be controlled within 7 days;
3. High degree of automation, simple operation, conducive to mass production, improving crystal growth efficiency and stability.
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